parasitic transistor
英 [ˌpærəˈsɪtɪk trænˈzɪstə(r)]
美 [ˌpærəˈsɪtɪk trænˈzɪstər]
网络 寄生三极管; 寄生晶体管; 寄生电晶体; 寄生電晶體
双语例句
- The parasitic edge transistor is well suppressed due to the adoption of mesa edge implantation.
由于采用硅岛边缘注入技术，寄生边缘管得到较好的抑制。 - The results show that the effect of the parasitic PNP, transistor;. is so serious under the condition of thin epitaxy that it can not be neglected even if the technology of doping gold is used.
结果指出，在薄外延条件下，寄生PNP效应严重，即使采用掺金工艺，寄生PNP效应也不能忽略不计。 - The effect of the parasitic PNP transistor of thin-epitaxy integrated circuit
薄外延集成电路的寄生PNP效应 - We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.
本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。 - The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。 - A two dimensional numerical simulation for NMOSFET with lateral parasitic transistor is presented. The influences of three key parameters such as the doping level, gate bias during irradiation, the bird's beak shape on NMOSFET are studied for total dose radiation hardening performance.
对具有侧向寄生晶体管的NMOSFET进行二维数值模拟，探讨了掺杂浓度、辐照偏压以及鸟嘴形状3个关键参数对于器件抗总剂量辐射加固性能的影响。 - The device size is small in VLSI and ULSI. The base width of a parasitic transistor is shorter, and emission efficiency dominates.
VLSI和ULSI中MOST的寄生双极晶体管是短基区，发射效率起主要作用。 - In the classic Colpitts chaotic circuit, due to the parasitic effect of the employed transistor, the fundamental oscillation frequency and the signal bandwidth both can only up to be one tenth of the cut-off frequency of the transistor.
而经典Colpitts混沌电路由于受晶体管寄生参数的影响，其基本振荡频率与信号带宽最高只能达到所使用晶体管截止频率的十分之一。 - The parasitic capacitor of transistor, matching network, biasing circuit and duty cycle are the key factors to the performance of PA. Based on the analysis above, this paper has done a great deal of research and discussion of the E-type PA in detail.
影响其性能的关键因素主要有晶体管寄生电容、匹配网络、偏置电路、开关占空比等。本论文就上述课题对E类功率放大器进行详细的研究和讨论。